Beijing Hapros 1940 nm high-power (2 W) semiconductor laser diode chip

The HH-UMC-190-1940-TE-2-3.0-D1 is a high-efficiency, high-power semiconductor laser diode chip operating at a central wavelength of 1940 nm. Designed with a multi-quantum well structure, it delivers excellent optical performance and reliability under continuous wave (CW) operation. With an output power of 2 watts and a compact emitter width of 190 µm, this chip is ideal for medium- and high-power fiber laser pumping, biomedical devices, laser systems, and scientific research.

Its optical and electro-optical performance includes a narrow spectral bandwidth of 11 nm (FWHM), fast axis divergence of 53 degrees, slow axis divergence of 13 degrees, and a slope efficiency of 0.18 W/A. The chip operates efficiently within a temperature range of 15 to 35 °C, with a typical operating current of 15–16 A and voltage of 1.35–1.45 V.

The device features a TE polarization and supports 100% power modulation. It is manufactured with strict quality standards to ensure high reliability and is recommended to be handled with electrostatic discharge (ESD) protection and vacuum suction methods to prevent damage due to its fragile structure.

This laser chip is engineered for advanced photonics applications that demand stable performance, compact design, and high output at 1940 nm.